DNBT8105_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – 1A NPN SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Collector Current Rating
• Complementary Version Available (DPBT8105)
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green Device" (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DNBT8105
1A NPN SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B
E
Top View
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
80
60
5
1
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 1) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
600
209
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V_(BR)CBO
80
V_(BR)CEO
60
V_(BR)EBO
5
I_CBO
⎯
I_CES
⎯
I_EBO
⎯
100
h_FE
100
80
30
V_CE(SAT)
⎯
⎯
V_BE(SAT)
⎯
V_BE(ON)
⎯
C_obo
⎯
f_T
150
Max
⎯
⎯
⎯
100
100
100
⎯
300
⎯
⎯
0.25
0.5
1.1
1.0
10
⎯
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100μA, I_C = 0
nA V_CB = 60V, I_E = 0
nA V_CES = 60V
nA V_EB = 4V, I_C = 0
I_C = 1mA, V_CE = 5V
⎯
I_C = 500mA, V_CE = 5V
I_C = 1A, V_CE = 5V
I_C = 2A, V_CE = 5V
V ^{IC = 500mA, IB = 50mA}
I_C = 1A, I_B = 100mA
V I_C = 1A, I_B = 100mA
V I_C = 1A, V_CE = 5V
pF V_CB = 10V, f = 1.0MHz
MHz V_CE = 10V, I_C = 50mA, f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DNBT8105
Document number: DS30513 Rev. 9 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated