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DN0150ALP4 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Features
⢠Epitaxial Die Construction
⢠Ultra-Small Leadless Surface Mount Package
⢠Ultra Low Profile (0.4mm max)
⢠Complementary PNP Type Available (DP0150ALP4 /
DP0150BLP4)
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q 101 Standards for High Reliability
DN0150ALP4 / DN0150BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
⢠Case: DFN1006H4-3
⢠Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminal Connections Indicator: Collector Dot
⢠Terminals: Finish ⯠NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
⢠Ordering Information: See Page 3
⢠Marking Information: See Page 3
⢠Weight: 0.0008 grams (approximate)
1
3E
C
2B
Bottom View
Top View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current â Continuous
Peak Pulse Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
60
50
5
100
200
30
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
DN0150ADJ
DN0150BDJ
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Symbol Min
V(BR)CBO
60
V(BR)CEO
50
V(BR)EBO
5
ICBO
â
IEBO
â
VCE(SAT)
â
120
hFE
200
fT
60
Cob
â
Typ
â
â
â
â
â
0.10
â
â
â
1.3
Max
â
â
â
0.1
0.1
0.25
240
400
â
â
Unit
Test Condition
V IC = 10μA, IE = 0
V IC = 1mA, IB = 0
V IE = 10μA, IC = 0
μA VCB = 60V, IE = 0
μA VEB = 5V, IC = 0
V IC = 100mA, IB = 10mA
â VCE = 6V, IC = 2mA
MHz
pF
VCE = 10V, IE = -1mA
f = 30MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle â¤2%
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated
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