DMS3014SSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

DMS3014SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R_DS(ON) - minimizes conduction losses
• Low V_SD - reducing the losses due to body diode conduction
• Low Q_rr - lower Q_rr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – I_AR and E_AR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
Top View
S
D
S
D
S
D
G
D
Top View
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) V_GS = 4.5V
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
TA = 25°C
TA = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AR
Value
30
±12
10.4
6.6
63
30
45
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.55
81.3
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I_AR and E_AR rating are based on low frequency and duty cycles to keep T_J = 25°C.
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
1 of 6
www.diodes.com
September 2010
© Diodes Incorporated