|
DMP3105LVT_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – 30V P-CHANNEL ENHANCEMENT MODE MOSFET | |||
|
Product Summary
V(BR)DSS
-30V
RDS(on) max
75mΩ @ VGS = -10V
105mΩ @ VGS = -4.5V
ID
TA = 25°C
-3.9A
-3.3A
DMP3105LVT
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
⢠Low Input Capacitance
⢠Low On-Resistance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
⢠DC-DC Converters
⢠Power management functions
⢠Backlighting
⢠Motor Control
Mechanical Data
⢠Case: TSOT26
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Weight: 0.013 grams (approximate)
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMP3105LVT-7
Case
TSOT26
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Packaging
3,000/Tape & Reel
31P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
Feb
1
2
2011
Y
Mar
3
2012
Z
Apr
May
4
5
2013
A
Jun
Jul
6
7
2014
B
Aug
Sep
8
9
2015
C
Oct
O
2016
D
Nov
Dec
N
D
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
1 of 6
www.diodes.com
November 2011
© Diodes Incorporated
|
▷ |