DMP3100L Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3100L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance:
100mΩ @ V_GS = -10V, I_D = -2.7A
170mΩ @ V_GS = -4.5V, I_D = -2.0A
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Gate
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Drain
D
TOP VIEW
Source
EQUIVALENT CIRCUIT
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) V_GS = -10V
Steady
State
Pulsed Drain Current (Note 3)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
G
S
TOP VIEW
Value
-30
±20
-2.7
-2
-8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV_DSS
-30
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V
⎯
-800
nA
⎯
±80
±800
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V_GS(th)
-1.3
-1.8
-2.1
V
Static Drain-Source On-Resistance
R_{DS (ON)}
⎯
86
147
100
170
mΩ
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
|Y_fs|
⎯
V_SD
⎯
3.6
⎯
S
⎯
-1.26
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
⎯
227
⎯
pF
C_oss
⎯
64
⎯
pF
C_rss
⎯
36
⎯
pF
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = -250μA
V_DS = -30V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_GS = ±15V, V_DS = 0V
V_DS = V_GS, I_D = -250μA
V_GS = -10V, I_D = -2.7A
V_GS = -4.5V, I_D = -2.0A
V_DS = -5V, I_D = -2.7A
V_GS = 0V, I_S = -2.7A
V_DS = -10V, V_GS = 0V
f = 1.0MHz
DMP3100L
Document number: DS31441 Rev. 3 - 2
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated