DMP2240UW Datasheet, PDF (1/5 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP2240UW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Low On-Resistance
• 150 mΩ @ V_GS = -4.5V
• 200 mΩ @ V_GS = -2.5V
• 240 mΩ @ V_GS = -1.8V
• Very Low Gate Threshold Voltage V_GS(th) ≤ 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram Below
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-323
Top View
Drain
Gate
Source
Internal Schematic
D
G
S
Top View
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Characteristic
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±12
-1.5
-1.0
-5
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
250
500
-55 to +150
Notes:
1. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
mW
°C/W
°C
DMP2240UW
Document number: DS31372 Rev. 3 - 2
1 of 5
www.diodes.com
May 2010
© Diodes Incorporated