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DMP21D0UFB4 Datasheet, PDF (1/6 Pages) Diodes Incorporated – 20V P-CHANNEL ENHANCEMENT MODE MOSFET
A Product Line of
Diodes Incorporated
Product Summary
V(BR)DSS
-20V
RDS(on)
495mΩ @ VGS = -4.5V
690mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
ID @ TA = 25°C
-0.77A
-0.67A
-0.57A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Portable electronics
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 0.6mm2 – thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 3KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
DFN1006H4-3
Drain
ESD PROTECTED TO 3kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Marking
NO
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
DMP21D0UFB4-7B
NO
NO = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
June 2011
© Diodes Incorporated