DMP2160UW Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 100 mΩ @ V_GS = -4.5V
• 120 mΩ @ V_GS = -2.5V
• 160 mΩ @ V_GS = -1.8V
• Very Low Gate Threshold Voltage V_GS(th) ≤ 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q 101 Standards for High Reliability
DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram Below
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
Drain
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current
Characteristic
T_A = 25°C
T_A = 70°C
Gate
Source
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
G
S
TOP VIEW
Value
-20
±12
-1.5
-1.2
-10
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
350
360
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in² FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
Units
mW
°C/W
°C
DMP2160UW
Document number: DS31521 Rev. 3 - 2
1 of 4
www.diodes.com
November 2008
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