DMP2160UFDB Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 70mΩ @V_GS = -4.5V
• 85mΩ @V_GS = -2.5V
• 86mΩ (typ) @V_GS = -1.8V
• Low Gate Threshold Voltage, -0.9V Max
• Fast Switching Speed
• Low Input/Output Leakage
• Low Profile, 0.5mm Max Height
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: DFN2020B-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.0065 grams (approximate)
DFN2020B-6
DG S
3
2
1
BOTTOM VIEW
4
5
6
S GD
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.4
89
-55 to +150
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±12
-3.8
-13
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
Units
V
V
A
A
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
1 of 6
www.diodes.com
September 2009
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