DMP210DUDJ Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Dual P-Channel MOSFET
• Low On-Resistance
o 5.0Ω @ -4.5V
o 7.0Ω @ -2.5V
o 10Ω @ -1.8V
o 15Ω @ -1.5V
• Very Low Gate Threshold Voltage V_GS(TH) <1V
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMP210DUDJ
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.0027 grams (approximate)
SOT-963
D₂
G₁
S₁
ESD protected
TOP VIEW
S₂
G₂
D₁
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
@T_A = 25°C
@T_A = 85°C
T_P = 10μs
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±8
-140
-100
-600
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient, Note 1
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
330
377.16
-55 to +150
Notes:
1. Device mounted on 1”x1” FR-4 substrate PC board, with minimum recommended pad layout, single sided.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mA
Units
mW
°C/W
°C
DMP210DUDJ
Document number: DS31494 Rev. 4 - 2
1 of 6
www.diodes.com
June 2010
© Diodes Incorporated