DMP2104V_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP2104V
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563
D
D
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
Operating and Storage Temperature Range
D
DG
TOP VIEW
Internal Schematic
Steady
State
t ≤ 5s
T_A = 25°C
T_A = 70°C
Steady
State
T_A = 25°C
T_A = 70°C
t ≤ 5s
t_p = 10μs
Symbol
V_DSS
V_GSS
I_D
P_D
I_D
P_D
I_DM
T_j, T_STG
Value
-20
±12
-860
-690
170
-950
-760
210
-4.0
-55 to +150
Units
V
V
mA
mW
mA
mW
A
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
BV_DSS
-20
T_J = 25°C
T_J = 125°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = -250μA
⎯
-1.0
-5.0
μA V_DS = -20V, V_GS = 0V
⎯
±100
nA V_GS = ±12V, V_DS = 0V
V_GS(th) -0.45
⎯
-1.0
V V_DS = V_GS, I_D = -250μA
92
150
V_GS = -4.5V, I_D = -950mA
R_{DS (ON)}
⎯
134
200
mΩ V_GS = -2.5V, I_D = -670mA
180
240
V_GS = -1.8V, I_D = -200mA
g_FS
⎯
3.1
⎯
S V_DS = -10V, I_D = -810mA
V_SD
⎯
⎯
-0.9
V V_GS = 0V, I_S = -360mA
C_iss
⎯
320
⎯
C_oss
⎯
80
⎯
C_rss
⎯
60
⎯
pF
pF
V_DS = -16V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2104V
Document number: DS30942 Rev. 5 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated