DMP2104V Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODELS: DMP2104V
DMP2104V
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
K
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
A
BC
D
G
M
H
D
D
L
S
D
DG
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady
State
T_A = 25°C
T_A = 70°C
Steady
State
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
Operating and Storage Temperature Range
t ≤ 5s
T_A = 25°C
T_A = 70°C
t ≤ 5s
t_p = 10μs
Symbol
V_DSS
V_GSS
I_D
Value
-20
±12
-860
-690
P_D
170
I_D
-950
-760
P_D
I_DM
T_j, T_STG
210
-4.0
-55 to +150
Units
V
V
mA
mW
mA
mW
A
°C
Notes:
1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30942 Rev. 3 - 2
1 of 4
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DMP2104V
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