DMP2104LP_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP2104LP
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
DFN1411-3
Case: DFN1411-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - NiPdAu over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.003 grams (approximate)
S
D
G
TOP VIEW
BOTTOM VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 1)
T_A = 25°C
T_A = 70°C
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
Value
-20
±12
-1.5
-1.2
Units
V
V
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
500
250
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
BV_DSS
-20
T_J = 25°C
T_J = 125°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = -250μA
⎯
-1.0
-5.0
μA V_DS = -20V, V_GS = 0V
⎯
±100
nA V_GS = ±12V, V_DS = 0V
V_GS(th) -0.45
⎯
-1.0
V V_DS = V_GS, I_D = -250μA
92
150
V_GS = -4.5V, I_D = -950mA
R_{DS (ON)}
⎯
134
200
mΩ V_GS = -2.5V, I_D = -670mA
180
240
V_GS = -1.8V, I_D = -200mA
g_FS
⎯
3.1
⎯
S V_DS = -10V, I_D = -810mA
V_SD
⎯
⎯
-0.9
V V_GS = 0V, I_S = -360mA
C_iss
⎯
320
⎯
C_oss
⎯
80
⎯
C_rss
⎯
60
⎯
pF
pF
V_DS = -16V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2104LP
Document number: DS31091 Rev. 6 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated