DMP2066LSS Datasheet, PDF (1/4 Pages) Diodes Incorporated – SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 40mΩ @ V_GS = -4.5V
• 70mΩ @ V_GS = -2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMP2066LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072g (approximate)
SOP-8L
S
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 70°C
S
D
S
D
G
D
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±12
-6.5
-5.2
-26
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min
BV_DSS
-20
I_DSS
⎯
I_GSS
⎯
V_GS(th)
-0.6
⎯
R_{DS (ON)}
⎯
g_fs
⎯
V_SD
-0.5
C_iss
⎯
C_oss
⎯
C_rss
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
9
-0.72
820
200
160
Max
⎯
-1
±100
-1.2
40
70
⎯
-1.4
⎯
⎯
⎯
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = -250μA
V_DS = -20V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_DS = V_GS, I_D = -250μA
V_GS = -4.5V, I_D = -5.8A
V_GS = -2.5V, I_D = -3.8A
V_DS = -10V, I_D = -4.6A
V_GS = 0V, I_S = -2.1A
V_DS = -15V, V_GS = 0V
f = 1.0MHz
DMP2066LSS
Document number: DS31522 Rev. 1 - 2
1 of 4
www.diodes.com
August 2008
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