DMP2066LDM Datasheet, PDF (1/5 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low R_DS(ON):
• 40 mΩ @V_GS = -4.5V
• 70 mΩ @V_GS = -2.5V
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
DMP2066LDM
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
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SOT-26
Case: SOT-26
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
D
D
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
T_A = 25°C
T_A = 70°C
D
D
G
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
Value
-20
±12
-4.6
-3.7
-18
2.0
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.25
100
-55 to +150
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
V
V
A
A
A
Unit
W
°C/W
°C
DMP2066LDM
Document number: DS31464 Rev. 3 - 2
1 of 5
www.diodes.com
August 2008
© Diodes Incorporated