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DMP2035UVT Datasheet, PDF (1/6 Pages) Diodes Incorporated – -20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
35mΩ @ VGS = -4.5V
45mΩ @ VGS = -2.5V
ID
TA = 25°C
-6.0A
-5.2A
DMP2035UVT
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• ESD protected Up To 3KV
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Motor Control
• Power management functions
• Analog Switch
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0013 grams (approximate)
Drain
TSOT26
ESD PROTECTED TO 3kV
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin-Out
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMP2035UVT-7
DMP2035UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
20P
20P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
1 of 6
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2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
March 2012
© Diodes Incorporated