DMP2035UTS Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Dual P-Channel MOSFET
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected up to 3kV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMP2035UTS
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: TSSOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.039 grams (approximate)
D1
D2
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
1
D
D
2
S1
S2
3
S1
S2
4
G1
G2
Top View
Pin Configuration
G1
8
7
6
5
G2
S1
S2
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
-20
V
Gate-Source Voltage
V_GSS
±8
V
Continuous Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 85°C
I_D
6.04
3.96
A
Pulsed Drain Current (Note 4)
I_DM
22
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Symbol
P_D
Value
0.89
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
R_θJA
T_J, T_STG
142.7
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMP2035UTS
Document number: DS31940 Rev. 3 - 2
1 of 6
www.diodes.com
January 2010
© Diodes Incorporated