DMP2035U Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 3KV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED TO 3kV
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DMP2035U
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
Internal Schematic
D
G
S
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Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
-20
V
V_GSS
±8
V
Continuous Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 70°C
I_D
-3.6
-2.9
A
Pulsed Drain Current (Note 4)
I_DM
-24
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Symbol
P_D
Value
0.81
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
R_θJA
T_J, T_STG
153.5
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t أ10s.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMP2035U
Document number: DS31830 Rev. 1 - 2
1 of 6
www.diodes.com
May 2009
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