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DMP2033UCB9_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON)
33mΩ @ VGS = -4.5V
ID
TA = 25°C
-5.8A
DMP2033UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Qg & Qgd
• Small Footprint 1.5-mm × 1.5-mm
• Gate ESD Protection 3kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Battery Management
• Load Switch
• Battery Protection
Mechanical Data
• Case: U-WLB1515-9
• Terminal Connections: See Diagram Below
• Weight: 0.0018 grams (approximate)
ESD PROTECTED TO 3kV
GDS
D DS
DSS
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2033UCB9-7
Case
U-WLB1515-9
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
AW
YM
AW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
1 of 6
www.diodes.com
June 2012
© Diodes Incorporated