DMP2012SN_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP2012SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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SC-59
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
ESD protected
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
TOP VIEW
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±12
-0.7
-2.8
Unit
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
BV_DSS
-20
I_DSS
⎯
I_GSS
⎯
V_GS(th)
R_{DS (ON)}
-0.5
⎯
Typ
⎯
⎯
⎯
⎯
0.23
0.37
Max Unit
⎯
V
-10
μA
±10
μA
-1.2
V
0.30
0.50
Ω
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
|Y_fs|
⎯
V_SD
⎯
C_iss
⎯
C_oss
⎯
C_rss
⎯
t_D(ON)
⎯
t_D(OFF)
⎯
t_r
⎯
t_f
⎯
1.5
⎯
S
-0.8
-1.1
V
180
⎯
pF
120
⎯
pF
50
⎯
pF
5
⎯
ns
55
⎯
ns
20
⎯
ns
70
⎯
ns
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = 250mA
V_DS = -20V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_DS = V_GS, I_D = -250μA
V_GS = -4.5V, I_D = -0.4A
V_GS = -2.5V, I_D = -0.4A
V_DS = -10V, I_D = 0.4A
V_GS = 0V, I_S = -0.7A
V_DS = -10V, V_GS = 0V
f = 1.0MHz
V_DD = -10V, I_D = -0.4A,
V_GS = -5.0V, R_GEN = 50Ω
DMP2012SN
Document number: DS30790 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated