DMP2012SN Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMP2012SN
DMP2012SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC-59
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: See Last Page
• Ordering & Date Code Information: See Last Page
• Weight: 0.008 grams (approximate)
A
D
BC
G TOP VIEW S
E
D
G
H
K
M
J
L
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V_DSS
V_GSS
I_D
I_DM
P_d
R_θJA
T_j, T_STG
-20
±12
-0.7
-2.8
500
250
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SC-59
Dim Min Max
A 0.30 0.50
B 1.40 1.80
C 2.50 3.00
D 0.85 1.05
E 0.30 0.70
G 1.70 2.10
H 2.70 3.10
J
⎯
0.10
K 1.00 1.40
L 0.55 0.70
M 0.10 0.35
α
0°
8°
All Dimensions in mm
Unit
V
V
A
A
mW
°C/W
°C
DS30790 Rev. 2 - 2
1 of 4
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DMP2012SN
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