DMP2004DMK Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP2004DMK
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual P-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage V_GS(th) < 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.015 grams (approximate)
SOT-26
D₂
G₁
S₁
ESD PROTECTED
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Characteristic
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±8
-550
-1.9
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-55 to +150
Units
V
V
mA
A
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min
Typ
BV_DSS
-20
⎯
IDSS
⎯
⎯
I_GSS
⎯
⎯
V_GS(th)
-0.5
⎯
0.7
R_{DS (ON)}
⎯
1.1
1.7
|Y_fs|
200
⎯
VB_SD
-0.5
⎯
C_iss
C_oss
C_rss
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
-1.0
±1.0
-1.0
0.9
1.4
2.0
⎯
-1.2
175
30
20
Unit
V
μA
μA
V
Ω
mS
V
pF
pF
pF
Test Condition
V_GS = 0V, I_D = -250mA
V_DS = -20V, V_GS = 0V
V_GS = ±4.5V, V_DS = 0V
V_DS = V_GS, I_D = -250μA
V_GS = -4.5V, I_D = -430mA
V_GS = -2.5V, I_D = -300mA
V_GS = -1.8V, I_D = -150mA
V_DS =10V, I_D = -0.2A
V_GS = 0V, I_S = 115mA
V_DS = -16V, V_GS = 0V
f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2004DMK
Document number: DS30939 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated