DMN66D0LT_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN66D0LT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate, 1KV (HBM)
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
Drain
SOT-523
D
ESD PROTECTED, 1KV
TOP VIEW
Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Continuous
Continuous
Continuous @ +100°C
Pulsed
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Symbol
VDSS
VGSS
ID
G
S
TOP VIEW
Value
60
±20
115
73
800
Units
V
V
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
R_θJA
TJ, TSTG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 70

V V_GS = 0V, I_D = 10µA
@ TC = +25°C
@ TC = +125°C
IDSS


1.0
500
µA V_DS = 60V, V_GS = 0V
IGSS
  ±5 µA V_GS = ±20V, V_DS = 0V
VGS(th) 1.2  2.0 V VDS = VGS, ID = 250µA
@ TJ = +25°C
@ TJ = +125°C
RDS (ON)

3.5
3.0
6
5
Ω
VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
gFS
80   mS V_DS = 10V, I_D = 0.115A
Ciss
Coss
Crss
 23  pF
 3.4  pF V_DS = 25V, V_GS = 0V, f = 1.0MHz
 1.4  pF
tD(ON)
 10

ns V_DD = 30V, I_D = 0.115A, R_L = 150Ω,
tD(OFF)

33

ns V_GEN = 10V_, R_GEN = 25Ω
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
DMN66D0LT
Document number: DS31530 Rev. 3 - 2
1 of 4
www.diodes.com
August 2014
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