DMN62D0SFD Datasheet, PDF (1/6 Pages) Diodes Incorporated – Low On-Resistance

Product Summary
V_(BR)DSS
60V
R_DS(ON)
2Ω @ V_GS = 10V
3Ω @ V_GS = 5V
I_D
T_A = 25°C
540mA
430mA
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Load switch
DMN62D0SFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate to 2kV
• Lead Free/RoHS Compliant (Note 1)
• Green Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
Drain
ESD PROTECTED TO 2kV
Top View
Bottom View
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Top view
Pin-out
Ordering Information (Note 3)
Notes:
Part Number
DMN62D0SFD-7
Case
X1-DFN1212-3
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Packaging
3000/Tape & Reel
Marking Information
K62
YM
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
Feb
1
2
2008
V
Mar
Apr
3
4
2009
W
May
Jun
5
6
2010
X
Jul
Aug
7
8
2011
Y
Sep
Oct
9
O
2012
Z
Nov
Dec
N
D
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated