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DMN601WK_15_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
ï· Low On-Resistance: RDS(ON)
ï· Low Gate Threshold Voltage
ï· Low Input Capacitance
ï· Fast Switching Speed
ï· Low Input/Output Leakage
ï· ESD Protected Gate
ï· Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
ï· Halogen and Antimony Free. âGreenâ Device (Note 3)
ï· Qualified to AEC-Q101 Standards for High Reliability
DMN601WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
ï· Case: SOT323
ï· Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
ï· Moisture Sensitivity: Level 1 per J-STD-020D
ï· Terminals: Finish ï¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3
ï· Terminal Connections: See Diagram
ï· Weight: 0.006 grams (approximate)
ESD PROTECTED
SOT323
Drain
TOP VIEW
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
D
G
S
TOP VIEW
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN601WK-7
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporatedâs definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Greenâ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K7K
K7K
Chengdu A/T Site Shanghai A/T Site
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
Feb
1
2
2013
A
Mar
3
2014
B
Apr
May
4
5
2015
C
Jun
Jul
6
7
2016
D
Aug
Sep
8
9
2017
E
Oct
O
2018
F
Nov
Dec
N
D
DMN601WK
Document number: DS30653 Rev. 5 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
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