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DMN601WK_09 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance: RDS(ON)
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠ESD Protected Up To 2kV
⢠"Green" Device (Note 4)
DMN601WK
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
⢠Case: SOT-323
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish ⯠Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.006 grams (approximate)
SOT-323
Drain
D
ESD PROTECTED TO 2kV
TOP VIEW
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
G
S
TOP VIEW
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 â¯
â¯
V VGS = 0V, ID = 10μA
IDSS
⯠⯠1.0 μA VDS = 60V, VGS = 0V
IGSS
⯠⯠±10 μA VGS = ±20V, VDS = 0V
VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA
â¯
RDS(ON)
â¯
⯠2.0
⯠3.0
VGS = 10V, ID = 0.5A
Ω VGS = 4.5V, ID = 0.2A
|Yfs|
80 ⯠⯠ms VDS = 10V, ID = 0.2A
Ciss
Coss
Crss
⯠⯠50 pF
⯠⯠25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
⯠⯠5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width â¤10μS, Duty Cycle â¤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN601WK
Document number: DS30653 Rev. 4 - 2
1 of 5
www.diodes.com
April 2009
© Diodes Incorporated
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