DMN601WK Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Lead-free Green
DMN601WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
A
D
BC
G
S
G
H
Mechanical Data
K
M
• Case: SOT-323
J
DE
L
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Drain
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: See Last Page
• Ordering & Date Code Information: See Last Page
• Weight: 0.006 grams (approximate)
Gate
Gate
Protection
Diode
ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
V_GSS
ID
P_d
RθJA
Tj, TSTG
Value
60
±20
300
800
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10µS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30653 Rev. 2 - 2
1 of 4
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DMN601WK
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