DMN601VK_15_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601VK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
 Dual N-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
 Case: SOT-563
 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020C
 Terminal Connections: See Diagram
 Terminals: Finish - Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
 Weight: 0.006 grams (Approximate)
SOT-563
D₂
G₁
S₁
ESD Protected up to 2kV
TOP VIEW
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN601VK-7
SOT-563
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-563
Date Code Key
Year
Code
Month
Code
D₂
G₁
S₁
K7K YM
S₂
G₂
D₁
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2005
S
Jan
1
2006
T
Feb
Mar
2
3
2007
U
Apr
4
2008
V
May
Jun
5
6
2009
W
2010
X
Jul
Aug
Sep
7
8
9
2011
Y
2012
Z
Oct
Nov
Dec
O
N
D
DMN601VK
Document number: DS30655 Rev. 5 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated