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DMN601VK_07 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN601VK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Dual N-Channel MOSFET
⢠Low On-Resistance
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠ESD Protected Up To 2kV
⢠"Green" Device (Note 4)
Mechanical Data
⢠Case: SOT-563
⢠Case Material: Molded Plastic, âGreenâ Molding
Compound. UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminal Connections: See Diagram
⢠Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
ESD Protected up to 2kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
S2
G2
D1
TOP VIEW
Internal Schematic
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Value
60
±20
305
800
Units
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
250
500
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 â¯
â¯
V VGS = 0V, ID = 10μA
IDSS
⯠⯠250 nA VDS = 50V, VGS = 0V
IGSS
â¯
⯠±500 nA VGS = ±10V, VDS = 0V
⯠⯠±100
VGS = ±5V, VDS = 0V
VGS(th) 1.0 1.6 2.5 V VDS = VGS, ID = 250μA
RDS (ON) â¯
⯠2.0
⯠3.0
Ω VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
|Yfs|
⯠284 ⯠ms VDS =10V, ID = 0.2A
VSD
0.5 ⯠1.4 V VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⯠⯠50 pF
â¯
â¯
25
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
⯠⯠5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width â¤10μS, Duty Cycle â¤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN601VK
Document number: DS30655 Rev. 4 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated
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