DMN601VK Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601VK
Lead-free Green DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking: See Page 2
• Ordering & Date Code Information: See Page 2
• Weight: 0.006 grams (approximate)
A
BC
D
G
K
H
M
L
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Drain
D₂
G₁
S₁
S₂
G₂
D₁
Gate
Body
Diode
Gate
Protection
Diode
Source
ESD protected up to 2kV
EQUIVALENT CIRCUIT PER ELEMENT
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
V_GSS
ID
Pd
RθJA
Tj, TSTG
Value
60
±20
305
800
250
500
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10µS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30655 Rev. 2 - 2
1 of 4
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DMN601VK
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