DMN601TK_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
SOT-523
Drain
D
ESD Protected up to 2kV
TOP VIEW
Gate
Gate
Protection Source
Diode
EQUIVALENT CIRCUIT
G
S
TOP VIEW
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 ⎯
⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯ ⎯ 1.0 μA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_GS = ±20V, V_DS = 0V
V_GS(th) 1.0 1.6 2.5 V V_DS = 10V, I_D = 1mA
R_{DS (ON)} ⎯
⎯ 2.0
⎯ 3.0
Ω
V_GS = 10V, I_D = 0.5A
V_GS = 5V, I_D = 0.05A
|Y_fs|
80 ⎯ ⎯ ms V_DS =10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯
⎯
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
⎯ ⎯ 5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 5 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated