DMN601TK Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Lead-free Green
DMN601TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
TOP VIEW
A
D
G
S
G
H
Mechanical Data
K
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding
J
D
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
Drain
• Terminals: Finish  Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: See Last Page
Gate
• Ordering & Date Code Information: See Last Page
• Weight: 0.002 grams (approximate)
Gate
Protection
Diode
Source
BC
N
L
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D   0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
M
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° 
All Dimensions in mm
ESD protected up to 2kV
EQUIVALENT CIRCUIT
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
I_D
Pd
RθJA
Tj, TSTG
Value
60
±20
300
800
150
833
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10µS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30654 Rev. 3 - 2
1 of 4
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DMN601TK
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