DMN601K_08 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 4 and 6)
• ESD Protected Up To 2kV
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SOT-23
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
ESD protected up to 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
G
S
TOP VIEW
Pin Out Configuration
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 ⎯
⎯
V V_GS = 0V_, I_D = 10μA
I_DSS
⎯ ⎯ 1.0 μA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_{GS =} ±20V, V_DS = 0V
V_GS(th) 1.0 1.6 2.5 V V_DS = 10V, I_D = 1mA
R_{DS (ON)}
⎯
⎯
⎯ 2.0
⎯ 3.0
Ω ^{VGS = 10V, ID = 0.5A}
V_GS = 5V, I_D = 0.05A
|Y_fs|
80 ⎯ ⎯ ms V_DS = 10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯ ⎯ 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
⎯ ⎯ 5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead. Halogen and Antimony Free.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DMN601K
Document number: DS30652 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated