DMN601DMK_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
60V
R_DS(ON) max
2.4Ω @ V_GS = 10V
4.0Ω @ V_GS = 4V
I_D max
T_A = 25°C
510mA
390mA
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Analog Switch
DMN601DMK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
ESD PROTECTED TO 2kV
SOT26
Top View
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Per Element
D₂
G₁
S₁
S₂
G₂
D₁
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN601DMK-7
Case
SOT26
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
K7K YM
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
Date Code Key
Year
2005
Code
S
Month
Jan
Code
1
2006
T
Feb
2
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
Mar
Apr
May
Jun
Jul
Aug
Sep
3
4
5
6
7
8
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN601DMK
Document number: DS30657 Rev. 5 - 2
1 of 5
www.diodes.com
November 2011
© Diodes Incorporated