DMN601DMK_07 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
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SOT-26
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.015 grams (approximate)
Drain
D₂
G₁
S₁
Gate
Body
Diode
ESD protected up to 2kV _{TOP VIEW}
Gate
Protection
Diode
Source
Equivalent Circuit Per Element
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Value
60
±20
305
800
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
225
556
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 ⎯
⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯⎯
1
μA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_GS = ±20V, V_DS = 0V
V_GS(th) 1.0 1.6 2.5 V V_DS = 10V, I_D = 1mA
R_{DS (ON)} ⎯
⎯ 2.4
⎯ 4.0
Ω ^{VGS = 10V, ID = 200mA}
V_GS = 4V, I_D = 200mA
|Y_fs|
100 ⎯
⎯ ms V_DS =10V, I_D = 200mA
V_SD
0.5 ⎯ 1.4 V V_GS = 0V, I_S = 115mA
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯
⎯
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
⎯ ⎯ 5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN601DMK
Document number: DS30657 Rev. 4 - 2
1 of 4
www.diodes.com
December 2007
© Diodes Incorporated