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DMN5_10 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Dual N-Channel MOSFET
⢠Low On-Resistance
⢠Very Low Gate Threshold Voltage, 1.0V max
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠Halogen and Antimony Free
⢠"Green" Device (Note 3)
⢠ESD Protected up to 2kV
Mechanical Data
⢠Case: SOT-563
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 5
⢠Ordering Information: See Page 5
⢠Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
D2
S1
G1
ESD protected up to 2kV
TOP VIEW
S2
G2
D1
DMN5L06VK
G2
S2
D1
DMN5L06VAK
DMN5010VAK
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Drain-Gate Voltage RGS ⤠1.0MΩ
VDGR
50
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
ID
280
mA
Pulsed
IDM
1.5
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
1 of 6
www.diodes.com
January 2010
© Diodes Incorporated
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