DMN5L06TK_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Green
DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• ESD Protected Up To 2kV
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
ESD PROTECTED, 2kV
SOT523
Drain
TOP VIEW
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN5L06TK-7
Case
SOT523
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DAB YM
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
Feb
1
2
2007
U
Mar
3
2008
V
Apr
May
4
5
2009
W
Jun
Jul
6
7
2010
X
Aug
Sep
8
9
2011
Y
Oct
O
2012
Z
Nov
Dec
N
D
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated