DMN5L06TK Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
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SOT-523
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Drain
D
ESD PROTECTED, 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Continuous
Gate
Gate
Protection
Diode
Source
Equivalent circuit
G
S
TOP VIEW
Symbol
V_DSS
V_GSS
I_D
Value
50
±20
280
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
Typ
Max
Unit
BV_DSS
50
@ T_C = 25°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V
⎯
60
nA
1
μA
⎯
500
nA
50
nA
V_GS(th)
0.49
⎯
1.2
V
⎯
1.8
3.0
R_{DS (ON)}
⎯
1.5
2.5
Ω
⎯
1.2
2.0
I_D(ON)
0.5
1.4
⎯
A
|Y_fs|
200
⎯
⎯
mS
V_SD
0.5
⎯
1.4
V
C_iss
⎯
C_oss
⎯
C_rss
⎯
⎯
50
pF
⎯
25
pF
⎯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = 10μA
V_DS = 50V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_GS = ±10V, V_DS = 0V
V_GS = ±5V, V_DS = 0V
V_DS = V_GS, I_D = 250μA
V_GS = 1.8V, I_D = 50mA
V_GS = 2.5V, I_D = 50mA
V_GS = 5.0V, I_D = 50mA
V_GS = 10V, V_DS = 7.5V
V_DS =10V, I_D = 0.2A
V_GS = 0V, I_S = 115mA
V_DS = 25V, V_GS = 0V
f = 1.0MHz
DMN5L06TK
Document number: DS30926 Rev. 4 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated