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DMN5L06DMK_0709 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN5L06DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Dual N-Channel MOSFET
⢠Low On-Resistance
⢠Very Low Gate Threshold Voltage (1.0V max)
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Small Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠ESD Protected up to 2kV
⢠"Green" Device (Note 4)
⢠Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
⢠Case: SOT-26
⢠Case Material: Molded Plastic, âGreenâ Molding
Compound. UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.015 grams (approximate)
SOT-26
D2
G1
S1
ESD protected up 2kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
S2
G2
D1
TOP VIEW
Internal Schematic
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
ID
305
800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
400
313
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol Min
Typ
Max
Unit
BVDSS
50
@ TC = 25°C
IDSS
â¯
IGSS
â¯
â¯
â¯
V
â¯
60
nA
1
μA
â¯
500
nA
50
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
0.49
â¯
1.0
V
â¯
â¯
3.0
RDS (ON)
â¯
â¯
2.5
Ω
â¯
â¯
2.0
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID(ON)
0.5
1.4
â¯
A
|Yfs|
200
â¯
â¯
mS
VSD
0.5
â¯
1.4
V
Ciss
â¯
Coss
â¯
Crss
â¯
â¯
50
pF
â¯
25
pF
â¯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width â¤10μS, Duty Cycle â¤1%.
4. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
1 of 4
www.diodes.com
Test Condition
VGS = 0V, ID = 10μA
VDS = 50V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 25V, VGS = 0V
f = 1.0MHz
September 2007
© Diodes Incorporated
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