DMN55D0UT_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate to 2kV
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMN55D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
ESD PROTECTED TO 2kV
SOT523
Top View
Drain
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 4)
Part Number
DMN55D0UT -7
DMN55D0UTQ -7
Qualification
Commercial
Automotive
Case
SOT523
SOT523
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NAC YM
NAC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
2014
B
May
Jun
5
6
Jul
Aug
Sep
7
8
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
1 of 5
www.diodes.com
December 2012
© Diodes Incorporated