DMN4800LSSL Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
30V
R_DS(on)
14mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
I_D max
T_A = 25°C
8.0A
6.7A
DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• 14mΩ @ V_GS = 10V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
SO-8
Top View
S
D
S
D
S
D
G
D
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN4800LSSL-13
Case
SO-8
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
2500/Tape & Reel
Marking Information
Top View
8
5
N4800LS
YY WW
1
4
Logo
Part no.
Week: 01 ~ 53
Year: “09” = 2009
DMN4800LSSL
Document number: DS35016 Rev. 3 - 2
1 of 6
www.diodes.com
October 2011
© Diodes Incorporated