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DMN4800LSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance
⢠14m⦠@ VGS = 10V
⢠20m⦠@ VGS = 4.5V
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
DMN4800LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
⢠Case: SOP-8L
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals Connections: See Diagram
⢠Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 5
⢠Ordering Information: See Page 5
⢠Weight: 0.072g (approximate)
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Characteristic
Pulsed Drain Current (Note 4)
Steady
State
TA = 25°C
TA = 70°C
S
D
S
D
S
D
G
D
TOP VIEW
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
Value
30
±25
9
7
50
Units
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.46
86
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
1 of 6
www.diodes.com
July 2009
© Diodes Incorporated
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