DMN4468LSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMN4468LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
S
D
S
D
S
D
G
D
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
ID
10
9
A
Pulsed Drain Current (Note 2)
IDM
50
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Max
1.52
82
-55 to +150
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMN4468LSS
Document number: DS31773 Rev. 3 - 2
1 of 6
www.diodes.com
June 2009
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