DMN4060SVT Datasheet, PDF (1/7 Pages) Diodes Incorporated – 45V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
45V
R_{DS(on) max}
46mΩ @ V_GS = 10V
62mΩ @ V_GS = 4.5V
I_D
T_A = 25°C
4.8A
4.1A
DMN4060SVT
45V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Backlighting
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
Drain
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Gate
Body
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMN4060SVT-7
Case
TSOT26
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
34D
34D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
1 of 7
www.diodes.com
February 2012
© Diodes Incorporated