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| DMN3730UFB Datasheet, PDF (1/6 Pages) Diodes Incorporated – 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Product Summary
V(BR)DSS
30V
RDS(on)
460mΩ @ VGS= 4.5V
560mΩ @ VGS= 2.5V
ID
TA = 25°C
0.9A
0.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
⢠Load switch
⢠Portable applications
⢠Power Management Functions
DFN1006-3
ESD PROTECTED TO 2kV
Bottom View
A Product Line of
Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
⢠0.5mm ultra low profile package for thin application
⢠0.6mm2 package footprint, 10 times smaller than SOT23
⢠Low VGS(th), can be driven directly from a battery
⢠Low RDS(on)
⢠âLead Freeâ, RoHS Compliant (Note 1)
⢠Halogen and Antimony Free. "Green" Device (Note 2)
⢠ESD Protected Gate 2kV
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: DFN1006-3
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
⢠Weight: 0.001 grams (approximate)
Drain
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN3730UFB-7
Marking
NE
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3000
Marking Information
NE
NE = Product Type Marking Code
Dot Denotes Drain Side
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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