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DMN3404L Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
G
S
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
5.8
4.9
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1 in2 FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
DMN3404L
Document number: DS31787 Rev. 2 - 2
1 of 6
www.diodes.com
June 2009
© Diodes Incorporated