DMN32D2LV_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.2V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate)
SOT-563
D₂
G₁
S₁
ESD PROTECTED
TOP VIEW
S₂
G₂
D₁
TOP VIEW
Schematic and Transistor Diagram
Ordering Information (Note 4)
Notes:
Part Number
DMN32D2LV-7
Case
SOT-563
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-563
D₂
G₁
S₁
DV YM
S₂
G₂
D₁
DV = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
Feb
1
2
2008
V
Mar
Apr
3
4
2009
W
May
Jun
5
6
2010
X
Jul
Aug
7
8
2011
Y
Sep
Oct
9
O
2012
Z
Nov
Dec
N
D
DMN32D2LV
Document number: DS31121 Rev. 8 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated