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DMN32D2LV Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Dual N-Channel MOSFET
⢠Low On-Resistance
⢠Very Low Gate Threshold Voltage, 1.2V max
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠ESD Protected Gate
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠"Green" Device (Note 3)
Mechanical Data
⢠Case: SOT-563
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
ESD PROTECTED
TOP VIEW
S2
G2
D1
TOP VIEW
Schematic and Transistor Diagram
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
VDSS
VGSS
ID
Value
30
±10
400
Unit
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
400
313
-55 to +150
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
@ TC = 25°C
Symbol Min
BVDSS
30
IDSS
â¯
IGSS
â¯
VGS(th)
0.6
â¯
RDS (ON)
â¯
â¯
|Yfs|
100
VSD
0.5
Ciss
â¯
Coss
â¯
Crss
â¯
Turn-on Time
ton
â¯
Turn-off Time
toff
â¯
Typ
Max
Unit
Test Condition
â¯
â¯
V VGS = 0V, ID = 250μA
â¯
1
μA VDS = 30V, VGS = 0V
â¯
±10
±500
μA VGS = ±10V, VDS = 0V
nA VGS = ±5V, VDS = 0V
â¯
1.2
V VDS = VGS, ID = 250μA
â¯
2.2
VGS = 1.8V, ID = 20mA
â¯
1.5
Ω VGS = 2.5V, ID = 20mA
â¯
1.2
VGS = 4.0V, ID = 100mA
â¯
â¯
mS VDS =10V, ID = 0.1A
â¯
1.4
V VGS = 0V, IS = 115mA
39
â¯
pF
10
â¯
pF
VDS = 3V, VGS = 0V
f = 1.0MHz
3.6
â¯
pF
11
â¯
nS VDD = 5V, ID = 10 mA,
51
â¯
nS VGS = 5V
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
2. No purposefully added lead.
3. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
1 of 5
www.diodes.com
April 2010
© Diodes Incorporated
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