DMN32D2LDF Datasheet, PDF (1/4 Pages) Diodes Incorporated – COMMON SOURCE DUAL N-CHANNEL

Features
• Common Source Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.2V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Small Surface Mount Package
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q 101 Standards for High Reliability
DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-353
G₂
S
G₁
G₂
S
G₁
Q₁
Q₂
ESD PROTECTED
TOP VIEW
BOTTOM VIEW
Maximum Ratings Q₁, Q₂ @T_A = 25°C unless otherwise specified
D₂
D₁
TOP VIEW
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
V_DSS
V_GSS
I_D
D₂
D₁
Schematic Diagram
Value
Unit
30
V
±10
V
400
mA
Thermal Characteristics Q₁, Q₂ @T_A = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
P_D
R_θJA
T_j, T_STG
280
446
-55 to +150
mW
°C/W
°C
Electrical Characteristics Q₁, Q₂ @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Symbol Min
Typ
Max
Unit
Test Condition
BV_DSS
30
@ T_C = 25°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = 250μA
⎯
1
μA V_DS = 30V, V_GS = 0V
⎯
±10
±1
μA ^{VGS = ±10V, VDS = 0V}
V_GS = ±5V, V_DS = 0V
V_GS(th)
0.6
⎯
1.2
V V_DS = V_GS, I_D = 250μA
⎯
⎯
2.2
V_GS = 1.8V, I_D = 20mA
R_{DS (ON)}
⎯
⎯
⎯
1.5
⎯
1.2
Ω V_GS = 2.5V, I_D = 20mA
V_GS = 4.0V, I_D = 100mA
|Y_fs|
100
⎯
⎯
mS V_DS =10V, I_D = 0.1A
V_SD
0.5
⎯
1.4
V V_GS = 0V, I_S = 115mA
C_iss
⎯
C_oss
⎯
39
10
⎯
⎯
pF
pF
V_DS = 3V, V_GS = 0V
f = 1.0MHz
C_rss
⎯
3.6
⎯
pF
Turn-on Time
t_on
⎯
11
⎯
nS _{VDD = 5V, ID = 10 mA,}
Turn-off Time
t_off
⎯
51
⎯
nS ^VGS ^{= 0-5V}
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
1 of 4
www.diodes.com
January 2008
© Diodes Incorporated