DMN3200U_16 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
 90mΩ @ VGS = 4.5V
 110mΩ @ VGS = 2.5V
 200mΩ @ VGS = 1.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish  Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (Approximate)
SOT23
D
D
ESD PROTECTED TO 3kV
Top View
G
Gate Protection
Diode
S
Equivalent Circuit
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN3200U-7
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32N
32N = Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
~
~
Feb
2
2016
D
Mar
Apr
3
4
2017
E
May
5
2018
F
Jun
Jul
6
7
2019
G
Aug
8
2020
H
Sep
9
2021
I
Oct
Nov
O
N
2022
J
Dec
D
DMN3200U
Document number: DS31188 Rev. 7 - 2
1 of 6
www.diodes.com
May 2016
© Diodes Incorporated